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MB85RS64PNF-G-JNE Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MB85RS64PNF-G-JNEFujitsu1125Yes

MB85RS64PNF-G-JNE** is a **64-Kbit (8-Kbyte) FRAM (Ferroelectric Random Access Memory)** device manufactured by **Fujitsu**.

The MB85RS64PNF-G-JNE is a 64-Kbit (8-Kbyte) FRAM (Ferroelectric Random Access Memory) device manufactured by Fujitsu.

Key Specifications:

  • Memory Capacity: 64 Kbit (8 Kbyte)
  • Interface: SPI (Serial Peripheral Interface)
  • Operating Voltage: 3.0V to 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Write Endurance: 10 trillion (10^13) read/write cycles
  • Data Retention: 10 years (at 85°C)
  • Package: 8-pin SOP (Small Outline Package)
  • Speed: Up to 25 MHz (SPI clock frequency)
  • Low Power Consumption:
  • Active current: 1.5 mA (max)
  • Standby current: 30 µA (max)

Features:

  • Non-volatile memory with fast write performance (no write delay)
  • High-speed SPI interface for easy integration
  • No need for a backup battery (unlike SRAM)
  • Superior endurance compared to EEPROM or Flash
  • Hardware write protection function
  • Industrial-grade temperature range

Applications:

  • Data logging
  • Industrial automation
  • Smart meters
  • Medical devices
  • Automotive systems

This FRAM is designed for applications requiring high-speed, non-volatile, and high-reliability memory with low power consumption.

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