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BSC070N10NS5 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSC070N10NS5INFINEON5000Yes

BSC070N10NS5** is a power MOSFET manufactured by **Infineon Technologies**.

The BSC070N10NS5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: BSC070N10NS5
  • Type: N-Channel Power MOSFET
  • Technology: OptiMOS™ 5
  • Drain-Source Voltage (VDS): 100 V
  • Continuous Drain Current (ID): 70 A
  • Pulsed Drain Current (IDM): 280 A
  • RDS(on) (Max): 7.0 mΩ @ VGS = 10 V
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 125 W
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-263 (D2PAK)

Descriptions:

  • The BSC070N10NS5 is a high-performance N-Channel MOSFET designed for power management applications.
  • It is part of Infineon’s OptiMOS™ 5 family, offering low conduction losses and high efficiency.
  • Suitable for switching power supplies, motor control, DC-DC converters, and automotive applications.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current capability (70 A continuous, 280 A pulsed).
  • Optimized for fast switching applications.
  • AEC-Q101 qualified for automotive use.
  • Lead-free and RoHS compliant.

This MOSFET is ideal for high-efficiency power conversion systems requiring robust performance and thermal stability.

*(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)*

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