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IRLML5203TRPBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRLML5203TRPBFINFINEON18000Yes

-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package

The IRLML5203TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Type: N-Channel Power MOSFET
  • Package: SOT-23 (TO-236AB)
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 3.7A
  • Pulsed Drain Current (IDM): 15A
  • Gate-Source Voltage (VGS): ±12V
  • On-Resistance (RDS(on)): 45mΩ (max) at VGS = 10V
  • Power Dissipation (PD): 1.3W
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Threshold Voltage (VGS(th)): 1V (min), 2V (max)

Descriptions:

  • Technology: HEXFET® Power MOSFET
  • Application: Designed for high-efficiency switching applications in power management, DC-DC converters, and load switching.
  • RoHS Compliant: Yes

Features:

  • Low On-Resistance (RDS(on)): Ensures minimal conduction losses.
  • Fast Switching: Optimized for high-speed switching applications.
  • Logic-Level Gate Drive: Compatible with 5V logic signals.
  • Avalanche Energy Rated: Provides ruggedness in inductive load applications.
  • Lead-Free & Halogen-Free: Compliant with environmental standards.

This MOSFET is commonly used in portable electronics, battery-powered devices, and power supply circuits.

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