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IRF6608TR1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF6608TR1IOR490Yes

IRF6608TR1 is a power MOSFET manufactured by Infineon Technologies.

The IRF6608TR1 is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features:

Manufacturer:

Infineon Technologies

Part Number:

IRF6608TR1

Description:

The IRF6608TR1 is an N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in various electronic systems.

Key Specifications:

  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 110A (at 25°C)
  • Pulsed Drain Current (IDM): 440A
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 1.8mΩ (max) at VGS = 10V
  • Power Dissipation (PD): 200W (at 25°C)
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-220AB (Through-Hole)

Features:

  • Low on-resistance for reduced conduction losses
  • Fast switching speed for improved efficiency
  • High current handling capability
  • Robust and reliable performance in power applications
  • Avalanche energy specified for ruggedness

This MOSFET is commonly used in DC-DC converters, motor control, power supplies, and other high-current switching applications.

(Note: Always refer to the official datasheet for detailed and updated specifications.)

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