Professional IC Distribution & Technical Solutions

The IR60S6 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features of the IR60S6:

Specifications:

• Manufacturer: International Rectifier (IR)
• Type: N-Channel Power MOSFET
• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 60A
• Pulsed Drain Current (IDM): 240A
• Power Dissipation (PD): 200W
• Gate-Source Voltage (VGS): ±20V
• On-Resistance (RDS(on)): 0.009Ω (typical at VGS = 10V)
• Threshold Voltage (VGS(th)): 2V (typical)
• Input Capacitance (Ciss): 3000pF (typical)
• Output Capacitance (Coss): 700pF (typical)
• Reverse Transfer Capacitance (Crss): 100pF (typical)
• Operating Temperature Range: -55°C to +175°C

Descriptions:

• The IR60S6 is a high-performance N-Channel MOSFET designed for power switching applications.
• It features low on-resistance (RDS(on)) for efficient power handling.
• Suitable for high-current applications such as motor control, power supplies, and DC-DC converters.

Features:

• Low RDS(on): Enhances efficiency and reduces power losses.
• High Current Capability: Supports up to 60A continuous drain current.
• Fast Switching: Optimized for high-speed switching applications.
• Avalanche Energy Rated: Provides robustness in inductive load conditions.
• TO-220 Package: Ensures good thermal performance and ease of mounting.

This information is based on the manufacturer's datasheet and technical specifications.