Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > KEC > 2SC3200-GR

2SC3200-GR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3200-GRKEC318Yes

2SC3200-GR** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **KEC (Korea Electronics Company)**.

The 2SC3200-GR is a high-frequency NPN bipolar junction transistor (BJT) manufactured by KEC (Korea Electronics Company). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 15V
  • Maximum Emitter-Base Voltage (VEB): 4V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 300mW
  • Transition Frequency (fT): 1.5GHz (typical)
  • Noise Figure (NF): 1.5dB (typical at 1GHz)
  • Gain Bandwidth Product: High
  • Package Type: SOT-323 (SC-70)

Descriptions:

  • Designed for high-frequency amplification in RF and microwave applications.
  • Suitable for low-noise amplifier (LNA) circuits, VHF/UHF applications, and wireless communication systems.
  • Compact SOT-323 package for space-constrained designs.

Features:

  • High transition frequency (fT) for RF applications.
  • Low noise figure (NF) for improved signal clarity.
  • Small form factor (SOT-323) for PCB space efficiency.
  • Reliable performance in high-frequency circuits.

This transistor is commonly used in RF amplifiers, oscillators, and communication modules. For exact performance characteristics, refer to the KEC datasheet.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • KIA6058F ,102,SOP8

    KIA6058F Manufacturer: KEC (Korea Electronics Corporation)** ### **Specifications:** - **Type:** N-Channel Enhancement Mode MOSFET - **Drain-Source Voltage (VDSS):** 60V - **Gate-Source Voltage (VGSS):** ±20V - **Drain C

  • KIA8000SV-TU9 ,8090,SIP9

    KIA8000SV-TU9** is a semiconductor device manufactured by **KEC (Korea Electronics Corporation)**.

  • KIA6225P ,867,DIP8

    KIA6225P is a semiconductor device manufactured by KEC (Korea Electronics Company).

  • AN2010S,PAN,23,SOP

    TA2002F,TOS,23,SOP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales