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KT8554N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KT8554NKEC100Yes

KT8554N is a PNP power transistor manufactured by KEC (Korea Electronics Company).

The KT8554N is a PNP power transistor manufactured by KEC (Korea Electronics Company). Below are its specifications, descriptions, and features:

Specifications:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -4A
  • Power Dissipation (PD): 40W
  • DC Current Gain (hFE): 60–320 (at IC = 1A, VCE = -5V)
  • Transition Frequency (fT): 3MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220

Descriptions:

The KT8554N is a high-power PNP transistor designed for general-purpose amplification and switching applications. It is commonly used in power supply circuits, motor control, and audio amplifiers due to its high current and voltage handling capabilities.

Features:

  • High current capability (up to 4A)
  • Low saturation voltage
  • High power dissipation (40W)
  • Complementary NPN type: KT8154N
  • TO-220 package for easy mounting

This information is strictly factual and based on manufacturer datasheets.

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