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2SA1152 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1152NEC1598Yes

2SA1152** is a PNP silicon epitaxial planar transistor manufactured by **NEC**.

The 2SA1152 is a PNP silicon epitaxial planar transistor manufactured by NEC. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCB): -50V
  • Maximum Collector-Emitter Voltage (VCE): -50V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Collector Current (IC): -1A
  • Total Power Dissipation (Ptot): 1W
  • Junction Temperature (Tj): 125°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Transition Frequency (fT): 100MHz (typical)

Descriptions:

  • The 2SA1152 is a high-speed switching and amplification transistor designed for general-purpose applications.
  • It is housed in a TO-92 package, making it suitable for compact circuit designs.
  • Suitable for low-power amplification and switching applications in electronic circuits.

Features:

  • High DC current gain (hFE) for efficient signal amplification.
  • Low saturation voltage, enhancing switching performance.
  • Fast switching speed, making it useful in high-frequency applications.
  • Reliable performance in a wide range of operating conditions.

This transistor is commonly used in audio amplifiers, signal processing, and switching circuits.

Would you like additional details on its pin configuration or equivalent alternatives?

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