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BA1A4P-T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BA1A4P-TNEC2443Yes

BA1A4P-T** is a semiconductor device manufactured by **NEC**.

The BA1A4P-T is a semiconductor device manufactured by NEC. Below are the factual details about this component:

Manufacturer:

  • NEC (NEC Corporation, a Japanese multinational electronics company)

Specifications:

  • Type: High-speed switching diode
  • Package: SOD-323 (Small Outline Diode)
  • Maximum Reverse Voltage (V_R): 75V
  • Average Rectified Current (I_O): 100mA
  • Peak Forward Surge Current (I_FSM): 1A
  • Forward Voltage (V_F): 1V (typical at 10mA)
  • Reverse Recovery Time (t_rr): 4ns (ultra-fast switching)
  • Operating Temperature Range: -55°C to +125°C

Descriptions:

  • The BA1A4P-T is a silicon epitaxial planar diode designed for high-speed switching applications.
  • It is optimized for low forward voltage and fast reverse recovery time, making it suitable for high-frequency circuits.
  • The SOD-323 package ensures compactness, ideal for space-constrained PCB designs.

Features:

  • Ultra-fast switching (4ns reverse recovery time)
  • Low leakage current
  • High reliability
  • Small form factor (SOD-323)
  • RoHS compliant

This diode is commonly used in high-speed rectification, switching circuits, and signal demodulation in consumer electronics, communication devices, and automotive applications.

(Note: Always refer to the official NEC datasheet for precise technical details.)

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