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UPC3567C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPC3567CNEC100Yes

Part Number:** UPC3567C **Manufacturer:** NEC ### **Specifications:** - **Type:** RF Power Transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Power Dissipation (Pd):** 30W - **Collector-Base Voltage (VCBO):** 60V -

Part Number: UPC3567C

Manufacturer: NEC

Specifications:

  • Type: RF Power Transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Power Dissipation (Pd): 30W
  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 7A
  • Transition Frequency (fT): 175MHz
  • Gain Bandwidth Product: N/A
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

The UPC3567C is an NPN silicon RF power transistor designed for high-frequency amplification applications. It is commonly used in RF power amplifiers, transmitters, and other RF circuits requiring high power and frequency performance.

Features:

  • High power dissipation capability (30W)
  • High collector current (7A)
  • Suitable for RF amplification up to 175MHz
  • Robust TO-220 package for heat dissipation
  • Silicon-based construction for reliability

(Note: Specifications are based on available data; verify with the latest manufacturer datasheet for accuracy.)

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