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D2583 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D2583NEC280Yes

D2583 Manufacturer: NEC** ### **Specifications:** - **Type:** High-voltage switching transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Collector-Base Voltage (VCB):** 150V - **Maximum Collector-Emitter Volta

D2583 Manufacturer: NEC

Specifications:

  • Type: High-voltage switching transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Base Voltage (VCB): 150V
  • Maximum Collector-Emitter Voltage (VCE): 150V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 1.5A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 40–320 (varies by operating conditions)
  • Transition Frequency (fT): 20MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

The NEC D2583 is a high-voltage NPN bipolar junction transistor (BJT) designed for switching and amplification applications. It is commonly used in power supply circuits, inverters, and high-voltage control systems.

Features:

  • High voltage capability
  • Fast switching speed
  • Robust power handling
  • Suitable for general-purpose amplification and switching
  • TO-220 package for efficient heat dissipation

This information is based on NEC's original datasheet specifications.

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