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D6355G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D6355GNEC313Yes

Part D6355G Manufacturer: NEC** ### **Specifications:** - **Type:** High-power RF transistor - **Material:** Silicon (Si) - **Package:** TO-220 - **Polarity:** NPN - **Maximum Collector-Base Voltage (VCB):** 60V - **Maximum Col

Part D6355G Manufacturer: NEC

Specifications:

  • Type: High-power RF transistor
  • Material: Silicon (Si)
  • Package: TO-220
  • Polarity: NPN
  • Maximum Collector-Base Voltage (VCB): 60V
  • Maximum Collector-Emitter Voltage (VCE): 60V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 7A (max)
  • Power Dissipation (PD): 40W
  • Transition Frequency (fT): 50MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The D6355G is a high-power NPN silicon transistor designed for RF and general-purpose amplification applications. It is housed in a TO-220 package, providing efficient heat dissipation.

Features:

  • High current capability (7A max)
  • Medium-frequency operation (up to 50MHz)
  • Robust power dissipation (40W)
  • Suitable for RF amplifiers and switching circuits
  • TO-220 package for effective thermal management

This transistor is commonly used in power amplification, RF circuits, and switching applications.

*(Note: This information is based on NEC's historical specifications. For exact details, refer to the official NEC datasheet.)*

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