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UPA1434H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPA1434HNEC110Yes

Manufacturer:** NEC **Part Number:** UPA1434H ### **Specifications:** - **Type:** High-Frequency Transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Collector-Base Voltage (V_CBO):** 30V - **Maximum Collector-Emitter V

Manufacturer: NEC

Part Number: UPA1434H

Specifications:

  • Type: High-Frequency Transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Base Voltage (V_CBO): 30V
  • Maximum Collector-Emitter Voltage (V_CEO): 20V
  • Maximum Emitter-Base Voltage (V_EBO): 5V
  • Collector Current (I_C): 150mA
  • Total Power Dissipation (P_TOT): 200mW
  • Transition Frequency (f_T): 800MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

The UPA1434H is a high-frequency NPN transistor designed for amplification and switching applications. It is suitable for RF and general-purpose use due to its high transition frequency and low noise characteristics.

Features:

  • High-speed switching capability
  • Low noise performance
  • Compact TO-92 package
  • Suitable for RF amplification
  • Reliable silicon construction

This transistor is commonly used in communication devices, signal processing, and other high-frequency circuits.

(Note: Always verify datasheet details for exact specifications in your application.)

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