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NTMS4706NR2G(4706N) Specifications

Detailed technical information and Application Scenarios

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NTMS4706NR2G(4706N)ON253Yes

Manufacturer:** ON Semiconductor **Part Number:** NTMS4706NR2G (4706N) ### **Specifications:** - **Type:** N-Channel Power MOSFET - **Voltage Rating (VDS):** 30V - **Current Rating (ID):** 140A (continuous) - **Power Dissipation (PD):** 25

Manufacturer: ON Semiconductor

Part Number: NTMS4706NR2G (4706N)

Specifications:

  • Type: N-Channel Power MOSFET
  • Voltage Rating (VDS): 30V
  • Current Rating (ID): 140A (continuous)
  • Power Dissipation (PD): 250W
  • RDS(ON) (Max): 1.7mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Package: D2PAK (TO-263)

Descriptions:

The NTMS4706NR2G is a high-performance N-channel MOSFET designed for power management applications. It features low on-resistance (RDS(ON)) and high current handling capability, making it suitable for switching and amplification in automotive, industrial, and consumer electronics.

Features:

  • Low RDS(ON) for reduced conduction losses
  • High current capability (140A)
  • Optimized for high-efficiency power switching
  • Robust thermal performance
  • Lead-free and RoHS compliant

This MOSFET is commonly used in DC-DC converters, motor control, and battery management systems.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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