The CDG308N is a semiconductor device manufactured by TZ (Taiwan Semiconductor). Below are the factual specifications, descriptions, and features:
Specifications:
- Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 30A
- Pulsed Drain Current (IDM): 120A
- Power Dissipation (PD): 50W
- On-Resistance (RDS(on)): 8.5mΩ (max) at VGS = 10V
- Threshold Voltage (VGS(th)): 1V to 2.5V
- Input Capacitance (Ciss): 1800pF (typical)
- Package: TO-252 (DPAK)
Descriptions:
- The CDG308N is a high-performance N-Channel MOSFET designed for power switching applications.
- It features low on-resistance and fast switching characteristics, making it suitable for DC-DC converters, motor control, and power management circuits.
- The device is housed in a TO-252 (DPAK) package, which provides efficient thermal dissipation.
Features:
- Low RDS(on) for reduced conduction losses.
- High current handling capability (30A continuous, 120A pulsed).
- Fast switching speed for improved efficiency in high-frequency applications.
- Avalanche energy specified for ruggedness in inductive load switching.
- Lead-free and RoHS compliant for environmental safety.
For exact application details, always refer to the official datasheet from TZ (Taiwan Semiconductor).