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MMBT5401LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT5401LT1GONSEMI18000Yes

High Voltage Transistor(PNP Silicon)

The MMBT5401LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -160V
  • Collector-Emitter Voltage (VCEO): -150V
  • Emitter-Base Voltage (VEBO): -5V
  • Continuous Collector Current (IC): -600mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 30 to 300 (at IC = 10mA, VCE = -1V)
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

The MMBT5401LT1G is a general-purpose PNP transistor designed for switching and amplification applications. It is housed in a compact SOT-23 package, making it suitable for space-constrained designs.

Features:

  • High voltage capability
  • Low saturation voltage
  • High current gain
  • Pb-free and RoHS compliant

This transistor is commonly used in power management, signal amplification, and switching circuits.

(Note: Always refer to the official datasheet for detailed specifications and application guidelines.)

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