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2SD965-R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD965-RPAN400Yes

2SD965-R** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **PAN (Panasonic)**.

The 2SD965-R is a general-purpose NPN bipolar junction transistor (BJT) manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Manufacturer:

  • PAN (Panasonic)

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 40V
  • Collector-Emitter Voltage (VCEO): 30V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 5A
  • Power Dissipation (Pc): 1W
  • DC Current Gain (hFE): 60 ~ 320 (varies by operating conditions)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-92 (Plastic-encapsulated through-hole package)

Descriptions:

  • The 2SD965-R is a high-speed switching and amplification transistor.
  • Designed for general-purpose applications in electronic circuits.
  • Suitable for low-power amplification and switching operations.

Features:

  • High current gain (hFE) for efficient signal amplification.
  • Fast switching speed, making it useful for high-frequency applications.
  • Low saturation voltage, improving efficiency in switching circuits.
  • Compact TO-92 package, ideal for space-constrained designs.

This transistor is commonly used in audio amplifiers, signal processing, and switching circuits. Always refer to the official datasheet for precise operating conditions.

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