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BD231 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BD231PHI100Yes

BD231 is a PNP bipolar junction transistor (BJT) manufactured by PHI (Philips).

The BD231 is a PNP bipolar junction transistor (BJT) manufactured by PHI (Philips).

Specifications:

  • Type: PNP
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCB): -60V
  • Maximum Collector-Emitter Voltage (VCE): -60V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Maximum Collector Current (IC): -1A
  • Maximum Power Dissipation (Ptot): 25W
  • Transition Frequency (fT): 3MHz (typical)
  • DC Current Gain (hFE): 25-100 (depending on operating conditions)
  • Operating Temperature Range: -65°C to +150°C

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • Low saturation voltage for efficient switching.
  • Complementary NPN type: BD230.
  • Available in TO-126 package.

For exact performance characteristics, refer to the official datasheet from PHI (Philips).

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