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BD231 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
BD231	PHI	100	Yes

BD231 is a PNP bipolar junction transistor (BJT) manufactured by PHI (Philips).

The BD231 is a PNP bipolar junction transistor (BJT) manufactured by PHI (Philips).

Specifications:

Type: PNP
Material: Silicon (Si)
Maximum Collector-Base Voltage (V_CB): -60V
Maximum Collector-Emitter Voltage (V_CE): -60V
Maximum Emitter-Base Voltage (V_EB): -5V
Maximum Collector Current (I_C): -1A
Maximum Power Dissipation (P_tot): 25W
Transition Frequency (f_T): 3MHz (typical)
DC Current Gain (h_FE): 25-100 (depending on operating conditions)
Operating Temperature Range: -65°C to +150°C

Descriptions & Features:

Designed for general-purpose amplification and switching applications.
Low saturation voltage for efficient switching.
Complementary NPN type: BD230.
Available in TO-126 package.

For exact performance characteristics, refer to the official datasheet from PHI (Philips).

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