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BF422 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BF422PHI1006Yes

BF422 is a high-voltage NPN transistor manufactured by Toshiba.

The BF422 is a high-voltage NPN transistor manufactured by Toshiba. Below are its key specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Collector-Base Voltage (VCBO): 250V
  • Collector-Emitter Voltage (VCEO): 200V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (PTOT): 800mW
  • Transition Frequency (fT): 50MHz
  • DC Current Gain (hFE): 40 to 250 (at VCE = 5V, IC = 2mA)
  • Package: TO-92

These specifications are based on Toshiba's datasheet for the BF422 transistor.

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