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2SD1858TV2Q Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1858TV2QROHM135Yes

ROHM part 2SD1858TV2Q** is a **PNP bipolar junction transistor (BJT)** designed for general-purpose amplification and switching applications.

The ROHM part 2SD1858TV2Q is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 120–400 (at VCE = -5V, IC = -1A)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

  • Designed for high-speed switching and amplification in various electronic circuits.
  • Suitable for low-voltage, high-current applications.
  • Features high current gain (hFE) and low saturation voltage.

Features:

  • High current capability (up to -3A).
  • Low collector-emitter saturation voltage for efficient switching.
  • Compact surface-mount package (TO-252) for space-saving PCB designs.
  • Wide operating temperature range for robust performance.

This transistor is commonly used in power management, motor control, and audio amplification circuits. For exact application details, refer to the official ROHM datasheet.

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