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S1NB60B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S1NB60BSHINDENGEN292Yes

S1NB60B** is a silicon Schottky barrier diode manufactured by **Shindengen**.

The S1NB60B is a silicon Schottky barrier diode manufactured by Shindengen. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Schottky Barrier Diode
  • Maximum Average Forward Current (IF(AV)): 1A
  • Peak Forward Surge Current (IFSM): 30A (non-repetitive)
  • Maximum Reverse Voltage (VR): 60V
  • Forward Voltage (VF): 0.55V (at 1A)
  • Reverse Leakage Current (IR): 0.5mA (at VR = 60V, Ta = 25°C)
  • Junction Temperature (Tj): -40°C to +125°C
  • Storage Temperature (Tstg): -40°C to +150°C
  • Package: DO-41

Descriptions:

  • Designed for high-speed switching applications.
  • Low forward voltage drop for improved efficiency.
  • High reliability and performance in rectification circuits.

Features:

  • Fast Recovery Time: Minimizes switching losses.
  • Low Power Loss: Due to Schottky barrier structure.
  • High Surge Current Capability: Suitable for transient protection.
  • RoHS Compliant: Environmentally friendly.

This diode is commonly used in power supplies, DC-DC converters, and reverse polarity protection circuits.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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