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S1VB10 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S1VB10SHINDENGEN295Yes

S1VB10** is a Schottky barrier diode manufactured by **Shindengen Electric Manufacturing Co.

The S1VB10 is a Schottky barrier diode manufactured by Shindengen Electric Manufacturing Co., Ltd. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Schottky Barrier Diode
  • Maximum Average Forward Current (Io): 1A
  • Peak Forward Surge Current (Ifsm): 30A
  • Reverse Voltage (Vr): 100V
  • Forward Voltage Drop (Vf): 0.95V (typical at 1A)
  • Reverse Leakage Current (Ir): 10µA (max at 100V)
  • Junction Temperature (Tj): -40°C to +150°C
  • Storage Temperature (Tstg): -40°C to +150°C

Descriptions:

  • The S1VB10 is a high-efficiency Schottky diode designed for fast switching applications.
  • It is commonly used in power rectification, DC-DC converters, and reverse polarity protection circuits.
  • The diode features a low forward voltage drop, reducing power loss and improving efficiency.

Features:

  • Low Forward Voltage: Minimizes power dissipation.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • High Surge Current Capability: Withstands transient overloads.
  • Compact Package: Available in industry-standard DO-214AC (SMA) package.
  • Lead-Free & RoHS Compliant: Meets environmental standards.

This diode is ideal for switching power supplies, automotive electronics, and other applications requiring high efficiency and reliability.

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