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SIF2N60C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SIF2N60CSI450Yes

SIF2N60C** is an N-channel MOSFET manufactured by **SI (Silicon Integration Technology Inc.

The SIF2N60C is an N-channel MOSFET manufactured by SI (Silicon Integration Technology Inc.).

Specifications:

  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 2A
  • Pulsed Drain Current (IDM): 8A
  • Power Dissipation (PD): 35W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(ON)): 5.5Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (min), 5V (max)
  • Input Capacitance (Ciss): 150pF (typ)
  • Output Capacitance (Coss): 25pF (typ)
  • Reverse Transfer Capacitance (Crss): 10pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 50ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Description:

The SIF2N60C is a high-voltage MOSFET designed for switching applications, such as power supplies, inverters, and motor control circuits. It features low gate charge and fast switching characteristics, making it suitable for high-efficiency power conversion.

Features:

  • High Voltage Capability (600V)
  • Low On-Resistance
  • Fast Switching Speed
  • Low Gate Charge
  • Avalanche Energy Specified
  • TO-220F Package (Fully Molded)

This MOSFET is commonly used in offline power supplies, LED drivers, and other high-voltage switching applications.

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