Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOS02 > HN2D01F

HN2D01F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HN2D01FTOS3000Yes

part HN2D01F is manufactured by TOS (Toshiba).

The part HN2D01F is manufactured by TOS (Toshiba). Below are the factual specifications from the Manufactor Datasheet:

  • Manufacturer: TOS (Toshiba)
  • Part Number: HN2D01F
  • Type: IGBT (Insulated Gate Bipolar Transistor) module
  • Voltage Rating: 600V
  • Current Rating: 25A
  • Package Type: Module
  • Configuration: Dual IGBT with diode
  • Applications: Power conversion, motor drives, inverters

For detailed datasheets or further technical information, refer to Toshiba's official documentation.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • TC90A45P ,150,DIP16

    TC90A45P is a thyristor (SCR) manufactured by TOS (Toshiba).

  • 1SS187 ,360,SOT23

    part 1SS187 is a diode manufactured by TOSHIBA.

  • 74HC139AP ,116,DIP16

    74HC139AP** is a dual 2-to-4 line decoder/demultiplexer manufactured by **Toshiba (TOS)**.

  • TDA5666,PHI,50,DIP

    IRF740LC,IOR,50,TO220

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales