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1SS271(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS271(TE85L,F)TOSHIBA3000Yes

SS271(TE85L,F)** is a semiconductor device manufactured by **TOSHIBA**.

The SS271(TE85L,F) is a semiconductor device manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Part Number: SS271(TE85L,F)
  • Type: Schottky Barrier Diode
  • Package: SOD-123FL (Miniature Surface Mount)
  • Maximum Reverse Voltage (VR): 70V
  • Average Rectified Forward Current (IO): 2A
  • Peak Forward Surge Current (IFSM): 50A (pulsed)
  • Forward Voltage (VF): 0.55V (at 2A)
  • Reverse Leakage Current (IR): 100µA (max at 70V)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Function: A Schottky barrier diode designed for high-speed switching applications.
  • Applications: Used in power rectification, DC-DC converters, reverse polarity protection, and freewheeling diodes.
  • Material: Utilizes a Schottky barrier structure for low forward voltage drop and fast switching.

Features:

  • Low Forward Voltage: Ensures minimal power loss.
  • High Surge Current Capability: Suitable for transient conditions.
  • Fast Switching Speed: Ideal for high-frequency applications.
  • Compact Package: SOD-123FL for space-saving PCB designs.
  • High Reliability: Robust construction for stable performance.

For detailed datasheets, refer to TOSHIBA's official documentation.

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