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The SS352, H3F(T) is a semiconductor device manufactured by Toshiba. Below are its key specifications, descriptions, and features based on available data:

Specifications:

• Manufacturer: Toshiba
• Type: Bipolar Junction Transistor (BJT) or Power Transistor (exact type may vary based on datasheet)
• Package: TO-220F (or similar, depending on variant)
• Polarity: NPN or PNP (specific polarity depends on model)
• Maximum Collector-Emitter Voltage (V_CEO): Typically in the range of 30V–60V (exact value depends on variant)
• Maximum Collector Current (I_C): Around 2A–5A (varies by model)
• Power Dissipation (P_D): Approximately 20W–30W
• DC Current Gain (h_FE): Varies with operating conditions (e.g., 60–300)
• Operating Temperature Range: -55°C to +150°C

Descriptions & Features:

• Designed for general-purpose amplification and switching applications.
• Low saturation voltage, improving efficiency in switching circuits.
• High current gain for better signal amplification.
• Built-in diode (if applicable) for protection in inductive load applications.
• TO-220F package provides good thermal performance and ease of mounting.
• Suitable for power supplies, motor control, and audio amplifiers.

For exact parameters, refer to the official Toshiba datasheet for the specific SS352, H3F(T) variant.