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TPH4R606NH,L1Q(M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPH4R606NH,L1Q(MTOSHIBA20000Yes

TPH4R606NH,L1Q(M)** is a power MOSFET manufactured by **TOSHIBA**.

The TPH4R606NH,L1Q(M) is a power MOSFET manufactured by TOSHIBA. Below are its specifications, descriptions, and features:

Specifications

  • Manufacturer: TOSHIBA
  • Type: N-channel MOSFET
  • Package: TO-220F
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 40A
  • Pulsed Drain Current (IDM): 160A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 4.0mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) / 2.5V (max)
  • Operating Temperature Range: -55°C to +150°C

Descriptions

  • Designed for high-efficiency power switching applications.
  • Low on-resistance for reduced conduction losses.
  • Fast switching performance for improved efficiency.
  • Suitable for motor control, power supplies, and DC-DC converters.

Features

  • Low RDS(on): Minimizes power loss in conduction.
  • High Current Capability: Supports up to 40A continuous current.
  • Fast Switching Speed: Enhances efficiency in high-frequency applications.
  • Avalanche Energy Rated: Ensures robustness in inductive load conditions.
  • Lead-Free & RoHS Compliant: Environmentally friendly.

For detailed datasheets and application notes, refer to TOSHIBA's official documentation.

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