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2SA2061(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA2061(TE85L,F)TOSHIBA213000Yes

2SA2061(TE85L,F)** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SA2061(TE85L,F) is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 560 (at IC = -0.1A, VCE = -5V)
  • Transition Frequency (fT): 150MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92MOD (miniature plastic package)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • High current gain (hFE) with low saturation voltage.
  • Suitable for low-power audio amplifiers, driver stages, and signal processing circuits.

Features:

  • High fT (150MHz): Suitable for high-frequency applications.
  • Low Noise: Ideal for audio and signal processing circuits.
  • Compact TO-92MOD Package: Space-efficient for PCB designs.

For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.

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