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2SA684-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA684-YTOSHIBA200Yes

2SA684-Y** is a PNP silicon epitaxial planar transistor manufactured by **Toshiba**.

The 2SA684-Y is a PNP silicon epitaxial planar transistor manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (V_CBO): -60V
  • Maximum Collector-Emitter Voltage (V_CEO): -50V
  • Maximum Emitter-Base Voltage (V_EBO): -5V
  • Collector Current (I_C): -0.5A
  • Total Power Dissipation (P_T): 0.5W
  • Junction Temperature (T_j): 125°C
  • Storage Temperature (T_stg): -55°C to +150°C
  • DC Current Gain (h_FE): 60 to 320 (at V_CE = -5V, I_C = -10mA)
  • Transition Frequency (f_T): 80MHz (Typical)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Epitaxial planar construction ensures high reliability and performance.
  • Suitable for low-power circuits in consumer electronics, audio amplifiers, and signal processing.

Features:

  • Low saturation voltage for efficient switching.
  • High current gain (h_FE) for improved signal amplification.
  • Compact package (TO-92) for easy PCB mounting.
  • Fast switching speed due to moderate transition frequency.

This transistor is commonly used in audio amplifiers, voltage regulators, and driver circuits. For exact performance characteristics, refer to Toshiba’s official datasheet.

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