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2SC4117-GR(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC4117-GR(TE85L,F)TOSHIBA10000Yes

2SC4117-GR(TE85L,F)** is a high-frequency NPN transistor manufactured by **TOSHIBA**.

The 2SC4117-GR(TE85L,F) is a high-frequency NPN transistor manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Collector-Base Voltage (VCB): 50V
  • Collector-Emitter Voltage (VCE): 50V
  • Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (PT): 150mW
  • Transition Frequency (fT): 6GHz (Typical)
  • Noise Figure (NF): 1.5dB (Typical at 2GHz)
  • DC Current Gain (hFE): 20 to 200
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-frequency amplification in RF applications.
  • Suitable for low-noise amplifiers (LNA), oscillators, and mixers in wireless communication systems.
  • Features low noise and high gain performance.

Features:

  • High fT (6GHz) for excellent high-frequency response.
  • Low noise figure (1.5dB at 2GHz) for improved signal clarity.
  • Compact and surface-mountable package (SOT-343F) for space-saving PCB designs.
  • Pb-free and RoHS compliant for environmental safety.

This transistor is commonly used in mobile communication devices, satellite receivers, and other RF circuits.

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