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2SC6026MFVG,L3XG(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC6026MFVG,L3XG(TTOSHIBA8000Yes

2SC6026MFVG,L3XG(T)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC6026MFVG,L3XG(T) is a high-frequency NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 15V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 1A
  • Total Power Dissipation (PT): 1W
  • Transition Frequency (fT): 8GHz (typical)
  • Noise Figure (NF): Low noise characteristics
  • Package Type: SOT-89 (Miniature Surface-Mount Package)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-frequency amplification in RF and microwave applications.
  • Suitable for low-noise amplifier (LNA) circuits and VHF/UHF applications.
  • Features high transition frequency (fT) for excellent high-speed switching and amplification.
  • Compact SOT-89 package allows for space-efficient PCB designs.

Features:

  • High fT (8GHz) for superior RF performance.
  • Low noise figure for sensitive signal amplification.
  • High current capability (1A) for robust operation.
  • Surface-mount package (SOT-89) for modern circuit designs.
  • Wide operating temperature range for industrial and commercial applications.

This transistor is commonly used in RF amplifiers, wireless communication systems, and high-frequency signal processing circuits.

(Note: Always refer to the official TOSHIBA datasheet for precise electrical characteristics and application guidelines.)

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