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2SK4013(STA4,Q,M) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SK4013(STA4,Q,M)TOSHIBA5000Yes

TOSHIBA part 2SK4013(STA4,Q,M)** is a power MOSFET transistor designed for high-speed switching applications.

The TOSHIBA part 2SK4013(STA4,Q,M) is a power MOSFET transistor designed for high-speed switching applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 500V
  • Continuous Drain Current (ID): 8A
  • Pulsed Drain Current (IDM): 32A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(ON)): 1.2Ω (max) @ VGS = 10V
  • Input Capacitance (Ciss): 400pF (typ)
  • Output Capacitance (Coss): 70pF (typ)
  • Reverse Transfer Capacitance (Crss): 20pF (typ)
  • Turn-On Delay Time (td(on)): 15ns (typ)
  • Turn-Off Delay Time (td(off)): 60ns (typ)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220F (isolated type)

Descriptions & Features:

  • High-voltage, high-speed switching MOSFET suitable for power supply and motor control applications.
  • Low on-resistance for improved efficiency.
  • Fast switching performance with low gate charge.
  • Isolated TO-220F package for better thermal dissipation and electrical isolation.
  • Suitable for high-frequency switching circuits.

This MOSFET is commonly used in power conversion, inverters, and switching regulators. For detailed application notes, refer to the official TOSHIBA datasheet.

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