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RN1402,LF(T Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
RN1402,LF(TTOSHIBA3000Yes

Part Number:** RN1402,LF(T **Manufacturer:** TOSHIBA ### **Specifications:** - **Type:** NPN Silicon Epitaxial Planar Transistor - **Application:** High-speed switching, amplification - **Collector-Base Voltage (VCBO):** 50V - **Collector-E

Part Number: RN1402,LF(T

Manufacturer: TOSHIBA

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Application: High-speed switching, amplification
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (PT): 150mW
  • Junction Temperature (Tj): 125°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 120 to 400 (at VCE = 6V, IC = 2mA)
  • Transition Frequency (fT): 250MHz (min)
  • Package: SOT-23 (Miniature Surface-Mount)

Description:

The RN1402,LF(T) is a high-speed NPN transistor designed for switching and amplification in compact electronic circuits. Its small SOT-23 package makes it suitable for space-constrained applications.

Features:

  • High-Speed Switching: Suitable for fast signal processing.
  • Low Saturation Voltage: Enhances efficiency in switching applications.
  • Miniature SOT-23 Package: Ideal for high-density PCB designs.
  • Wide hFE Range: Provides flexibility in amplification circuits.

For detailed electrical characteristics, refer to the official Toshiba datasheet.

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