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SSM3K35MFV,L3XGF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SSM3K35MFV,L3XGF(TTOSHIBA8000Yes

### **SSM3K35MFV,L3XGF(T) - Toshiba** #### **Manufacturer:** Toshiba #### **Description:** The **SSM3K35MFV,L3XGF(T)** is a **P-channel MOSFET** designed for high-efficiency power management applications.

SSM3K35MFV,L3XGF(T) - Toshiba

#### Manufacturer: Toshiba

#### Description:

The SSM3K35MFV,L3XGF(T) is a P-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for load switching, power management, and battery protection circuits.

#### Key Specifications:

  • Type: P-channel MOSFET
  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): -3.5A (continuous)
  • On-Resistance (RDS(on)): 85mΩ (max) @ VGS = -10V
  • Power Dissipation (PD): 1W
  • Package: SOT-23F (Super Small Mold)
  • Operating Temperature: -55°C to +150°C

#### Features:

  • Low On-Resistance (RDS(on)): Ensures minimal power loss.
  • Compact SOT-23F Package: Space-saving design for high-density PCB layouts.
  • Fast Switching Speed: Optimized for high-efficiency applications.
  • Low Threshold Voltage (Vth): Suitable for low-voltage drive circuits.
  • AEC-Q101 Qualified (if applicable): Automotive-grade reliability.

#### Applications:

  • Power management in portable devices
  • Battery protection circuits
  • Load switching
  • DC-DC converters

This MOSFET is ideal for applications requiring efficient power handling in a compact form factor.

(Note: Verify datasheet for exact specifications as variations may exist.)

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