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TK3R1E04PL,S1X(S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TK3R1E04PL,S1X(STOSHIBA1500Yes

Manufacturer:** TOSHIBA **Part Number:** TK3R1E04PL,S1X(S ### **Specifications:** - **Type:** Power MOSFET - **Configuration:** Single N-channel - **Drain-Source Voltage (VDSS):** 40V - **Continuous Drain Current (ID)

Manufacturer: TOSHIBA

Part Number: TK3R1E04PL,S1X(S

Specifications:

  • Type: Power MOSFET
  • Configuration: Single N-channel
  • Drain-Source Voltage (VDSS): 40V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 3.1mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min), 2.5V (max)
  • Input Capacitance (Ciss): 1800pF (typ)
  • Output Capacitance (Coss): 500pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)
  • Switching Characteristics: Fast switching speed
  • Package: TO-220AB (Through-hole)

Descriptions:

The TK3R1E04PL,S1X(S is a high-performance N-channel power MOSFET designed for low on-resistance and high-speed switching applications. It is suitable for power management in DC-DC converters, motor control, and other high-efficiency power systems.

Features:

  • Low on-resistance for reduced conduction losses
  • High current handling capability
  • Fast switching performance
  • Avalanche energy specified for ruggedness
  • Lead-free and RoHS compliant

This MOSFET is optimized for applications requiring efficient power handling and thermal performance.

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