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TK6A60D(STA4,Q,M) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TK6A60D(STA4,Q,M)TOSHIBA5000Yes

TK6A60D(STA4,Q,M)** is a power MOSFET manufactured by **TOSHIBA**.

The TK6A60D(STA4,Q,M) is a power MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-channel MOSFET
  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 6A
  • Pulsed Drain Current (IDM): 24A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 1.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2.0V (min) - 4.0V (max)
  • Input Capacitance (Ciss): 400pF (typ)
  • Output Capacitance (Coss): 40pF (typ)
  • Reverse Transfer Capacitance (Crss): 10pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 35ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • STA4 (TO-252, DPAK)

Descriptions & Features:

  • High-Voltage MOSFET: Suitable for switching applications up to 600V.
  • Low On-Resistance: Ensures efficient power handling.
  • Fast Switching Speed: Optimized for high-frequency applications.
  • Avalanche Energy Rated: Provides robustness in inductive load conditions.
  • Lead-Free & RoHS Compliant: Meets environmental standards.
  • Applications: Used in power supplies, motor control, inverters, and other high-voltage switching circuits.

This MOSFET is designed for reliability and performance in demanding power electronics applications.

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