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TLG336T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TLG336TTOSHIBA1200Yes

TLG336T is a semiconductor device manufactured by TOSHIBA.

The TLG336T is a semiconductor device manufactured by TOSHIBA. Below are the factual details from the Manufactor Datasheet:

Manufacturer:

TOSHIBA

Specifications:

1. Type: Power MOSFET

2. Voltage Rating: 30V

3. Current Rating: 30A (continuous drain current)

4. Package: TO-220SIS

5. On-Resistance (RDS(on)): Typically 6.0mΩ (at VGS = 10V)

6. Gate Threshold Voltage (VGS(th)): 1.0V (min) to 2.5V (max)

7. Power Dissipation (PD)): 2.5W (at Tc = 25°C)

8. Operating Temperature Range: -55°C to 150°C

Descriptions & Features:

  • Low On-Resistance: Optimized for high-efficiency power switching.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Avalanche Energy Specified: Enhances reliability in rugged conditions.
  • Built-in Diode: Includes a fast recovery body diode for inductive load handling.
  • Lead-Free & RoHS Compliant: Meets environmental standards.

For exact datasheet details, refer to TOSHIBA’s official documentation.

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