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SI7288DP-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI7288DP-T1-GE3VISHAY5240Yes

SI7288DP-T1-GE3** is a power MOSFET manufactured by **Vishay**.

The SI7288DP-T1-GE3 is a power MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features of this component:

Manufacturer:

Vishay Siliconix

Part Number:

SI7288DP-T1-GE3

Type:

N-Channel Power MOSFET

Key Specifications:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 50A
  • Pulsed Drain Current (IDM): 200A
  • RDS(ON) (Max): 4.5mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • Operating Temperature Range: -55°C to +150°C

Package:

  • PowerPAK® SO-8 (Optimized for high-power applications in a compact footprint)

Features:

  • Low On-Resistance (RDS(ON)) for reduced conduction losses
  • High Current Handling Capability (50A continuous, 200A pulsed)
  • Optimized for Power Management in DC-DC converters, motor control, and load switching
  • AEC-Q101 Qualified (Suitable for automotive applications)
  • Lead (Pb)-Free & RoHS Compliant

Applications:

  • DC-DC Converters
  • Motor Control Circuits
  • Power Management in Automotive Systems
  • Load Switching & Battery Protection

This MOSFET is designed for high-efficiency power conversion and switching applications, offering a balance of low RDS(ON) and high current capability in a small form factor.

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