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LBSS138LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LBSS138LT1GLRC56000Yes

LBSS138LT1G** is a **N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET)** manufactured by **ON Semiconductor (LRC)**.

The LBSS138LT1G is a N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) manufactured by ON Semiconductor (LRC).

Key Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): 2.5A
  • Pulsed Drain Current (IDM): 10A
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(on)): 85mΩ @ VGS = 4.5V
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Package: SOT-23 (3-Lead)

Features:

  • Logic Level Gate Drive: Optimized for 3V or 5V operation
  • Low On-Resistance: Enhances efficiency in switching applications
  • Fast Switching Speed: Suitable for high-frequency applications
  • Lead-Free & RoHS Compliant
  • AEC-Q101 Qualified (for automotive applications)

Applications:

  • Power management in portable devices
  • Load switching
  • DC-DC converters
  • Motor control
  • Battery protection circuits

This MOSFET is designed for low-voltage, high-efficiency applications where space and power efficiency are critical.

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