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2N7002LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7002LT1GONSEMI194166Yes

2N7002LT1G** is a **N-channel enhancement mode MOSFET** manufactured by **ON Semiconductor**.

The 2N7002LT1G is a N-channel enhancement mode MOSFET manufactured by ON Semiconductor.

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA
  • Pulsed Drain Current (IDM): 800mA
  • Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 7.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 0.8V (min), 3V (max)
  • Input Capacitance (Ciss): 25pF (typical)
  • Output Capacitance (Coss): 10pF (typical)
  • Reverse Transfer Capacitance (Crss): 5pF (typical)
  • Turn-On Delay Time (td(on)): 5ns (typical)
  • Turn-Off Delay Time (td(off)): 15ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (TO-236AB)

Descriptions:

  • Designed for low-voltage, low-current switching applications.
  • Suitable for signal switching, load switching, and general-purpose amplification.
  • RoHS compliant and halogen-free.

Features:

  • Low threshold voltage for compatibility with logic-level signals.
  • Fast switching speed for high-efficiency applications.
  • Low input and output capacitance for reduced power losses.
  • Small SOT-23 package for space-constrained designs.

This MOSFET is commonly used in battery-powered devices, portable electronics, and low-power switching circuits.

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