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TK12A50D(STA4,X,S) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TK12A50D(STA4,X,S)TOSHIBA20000Yes

TK12A50D(STA4,X,S)** is a semiconductor component manufactured by **Toshiba**.

The TK12A50D(STA4,X,S) is a semiconductor component manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: High-voltage switching transistor (NPN Darlington)
  • Collector-Emitter Voltage (VCEO): 400V
  • Collector Current (IC): 12A
  • Power Dissipation (PD): 80W
  • DC Current Gain (hFE): 1000 (min) at IC = 5A
  • Package: TO-3P (isolated type)
  • Operating Temperature Range: -40°C to +150°C

Descriptions:

  • Designed for high-voltage, high-current switching applications.
  • Features a built-in Darlington configuration for high gain and low saturation voltage.
  • Suitable for power supply circuits, motor control, and industrial applications.

Features:

  • High Voltage Capability: Supports up to 400V VCEO.
  • High Current Handling: Capable of 12A continuous collector current.
  • Low Saturation Voltage: Ensures efficient switching performance.
  • Built-in Diode: Includes a freewheeling diode for inductive load protection.
  • Isolated Package: TO-3P package provides electrical isolation for improved thermal performance.

This component is optimized for reliability in demanding power electronics applications. For detailed electrical characteristics, refer to Toshiba’s official datasheet.

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