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TK6A60D(STA4,X,M) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TK6A60D(STA4,X,M)TOSHIBA1485Yes

TK6A60D(STA4,X,M)** is a power MOSFET manufactured by **TOSHIBA**.

The TK6A60D(STA4,X,M) is a power MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Type: N-Channel Power MOSFET
  • Package: TO-252 (DPAK)
  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 6A
  • Pulsed Drain Current (IDM): 24A
  • Power Dissipation (PD): 40W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 1.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 3.0V (min), 5.0V (max)
  • Input Capacitance (Ciss): 500pF (typ)
  • Output Capacitance (Coss): 60pF (typ)
  • Reverse Transfer Capacitance (Crss): 15pF (typ)
  • Turn-On Delay Time (td(on)): 15ns (typ)
  • Turn-Off Delay Time (td(off)): 60ns (typ)
  • Operating Temperature Range (Tj): -55°C to +150°C

Descriptions:

  • The TK6A60D(STA4,X,M) is a high-voltage N-channel MOSFET designed for switching applications.
  • It features low on-resistance and fast switching performance, making it suitable for power supply and motor control applications.
  • The TO-252 (DPAK) package provides efficient thermal dissipation.

Features:

  • High Voltage Rating (600V) – Suitable for high-voltage applications.
  • Low On-Resistance – Reduces conduction losses.
  • Fast Switching Speed – Enhances efficiency in high-frequency circuits.
  • High Reliability – Robust construction for stable operation.
  • Avalanche Energy Specified – Ensures ruggedness in inductive load conditions.

This MOSFET is commonly used in switching power supplies, inverters, motor drivers, and industrial applications.

For detailed datasheets, refer to TOSHIBA's official documentation.

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