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The TK6A60D(STA4,X,M) is a power MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: TOSHIBA
• Type: N-Channel Power MOSFET
• Package: TO-252 (DPAK)
• Drain-Source Voltage (V_DSS): 600V
• Continuous Drain Current (I_D): 6A
• Pulsed Drain Current (I_DM): 24A
• Power Dissipation (P_D): 40W
• Gate-Source Voltage (V_GS): ±30V
• On-Resistance (R_DS(on)): 1.5Ω (max) @ V_GS = 10V
• Threshold Voltage (V_GS(th)): 3.0V (min), 5.0V (max)
• Input Capacitance (C_iss): 500pF (typ)
• Output Capacitance (C_oss): 60pF (typ)
• Reverse Transfer Capacitance (C_rss): 15pF (typ)
• Turn-On Delay Time (t_d(on)): 15ns (typ)
• Turn-Off Delay Time (t_d(off)): 60ns (typ)
• Operating Temperature Range (T_j): -55°C to +150°C

Descriptions:

• The TK6A60D(STA4,X,M) is a high-voltage N-channel MOSFET designed for switching applications.
• It features low on-resistance and fast switching performance, making it suitable for power supply and motor control applications.
• The TO-252 (DPAK) package provides efficient thermal dissipation.

Features:

• High Voltage Rating (600V) – Suitable for high-voltage applications.
• Low On-Resistance – Reduces conduction losses.
• Fast Switching Speed – Enhances efficiency in high-frequency circuits.
• High Reliability – Robust construction for stable operation.
• Avalanche Energy Specified – Ensures ruggedness in inductive load conditions.

This MOSFET is commonly used in switching power supplies, inverters, motor drivers, and industrial applications.

For detailed datasheets, refer to TOSHIBA's official documentation.